Elionix System
Manufacturer and model:
Elionix E-Beam Lithography System, Elionix, Japan ELS-G100
General Information:
High resolution, high speed e-beam lithography down to nanometers
Key Features:
Acceleration Voltage = 100kV, Beam Current from 20pA to 100nA
Sample Size: up to 200mm diameter
100MHz Pattern Generation
Ultra High Beam Position Accuracy - 20bit DAC + Laser Interferometric Stage
Sample Pre-Alignment Station
Automatic Load-Lock
Applications:
Ultra Fine Lithography down to Nanometer Scale
Materials:
Si, GaAs, InP, SiO2, Al2O3, Metallic Layers, etc
Start of Operation Date: December 2018
Edmond J. Safra (Givat-Ram)
Nano Center
Contacts
- Golan Tanami
- golant@savion.huji.ac.il